Place of Origin: | China |
Brand Name: | OEM |
Certification: | ISO9001 |
Minimum Order Quantity: | Negotiable |
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Price: | Negotiable |
Packaging Details: | 100 clean bag or single box packaging |
Delivery Time: | 5-7 working days after received your payment details working days after received your payment details |
Payment Terms: | T/T, Western Union, L/C |
CAS: | 25617-97-4 | EINECS No.: | 247-129-0 |
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MF: | GaN | Appearance: | Crystal |
Density: | 6.1g/mL,25/4℃ | MW: | 83.73 |
High Light: | silicon wafer substrate,silicon oxide wafer |
GaN Gallium Nitride Single Crystal Wafer CAS 25617-97-4 with Density of 6.1g/mL
Typical Physical Properties of GaN Gallium Nitride Single Crystal Wafer
2'' GaN Templates
Item | GaN-T-N | GaN-T-S | |
Dimensions | Φ 2'' | ||
Thickness | 15 μm, 20 μm, 30 μm, 40 μm | 30 μm, 90 μm | |
Orientation | C-axis(0001) ± 1° | ||
Conduction Type | N-type | Semi-Insulating | |
Resistivity(300K) | < 0.05 Ω.cm | > 106 Ω.cm | |
Dislocation Density | Less than 1x108 cm-2 | ||
Substrate structure | Thick GaN on Sapphire(0001) | ||
Useable Surface Area | > 90% | ||
Polishing | Standard: SSP Option: DSP | ||
Package | Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere. | ||
2'' -Standing GaN Substrates
Item | GaN-FS-N | GaN-FS-SI | |
Dimensions | Φ50.8mm ± 1mm | ||
Marco Defect Density | ALevel | 2 cm-2 | |
B Level | > 2 cm-2 | ||
Thickness | 350 ± 25 μm | ||
Orientation | C-axis(0001) ± 0.5° | ||
Orientation Flat | (1-100) ± 0.5°, 16.0 ± 1.0mm | ||
Secondary Orientation Flat | (11-20) ± 3°, 8.0 ± 1.0mm | ||
TTV(Total Thickness Variation) | <15 μm | ||
BOW | <20 μm | ||
Conduction Type | N-type | Semi-Insulating | |
Resistivity(300K) | < 0.5 Ω.cm | >106 Ω.cm | |
Dislocation Density | Less than 5x106 cm-2 | ||
Useable Surface Area | > 90% | ||
Polishing | Front Surface: Ra < 0.2nm. Epi-ready polished Back Surface: Fine ground | ||
Package | Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere. | ||
Free-standing GaN Substrates (Customized size)
Item | GaN-FS-10 | GaN-FS-15 | |
Dimensions | 10.0mm Χ10.5mm | 14.0mmΧ 15.0mm | |
Marco Defect Density | ALevel | 0 cm-2 | |
B Level | 2 cm-2 | ||
Thickness | Rank 300 | 300 ± 25 μm | |
Rank 350 | 350 ± 25 μm | ||
Rank 400 | 400 ± 25 μm | ||
Orientation | C-axis(0001) ± 0.5° | ||
TTV(Total Thickness Variation) | <15 μm | ||
BOW | <20 μm | ||
Conduction Type | N-type | Semi-Insulating | |
Resistivity(300K) | < 0.5 Ω.cm | >106 Ω.cm | |
Dislocation Density | Less than 5x106 cm-2 | ||
Useable Surface Area | > 90% | ||
Polishing | Front Surface: Ra < 0.2nm. Epi-ready polished Back Surface: Fine ground | ||
Package | Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere. | ||
Item | GaN-FS-N-1.5 | |||||
Dimensions | 25.4mm ± 0.5mm | 38.1mm± 0.5mm | 40.0mm ± 0.5mm | 45.0mm ± 0.5mm | ||
Marco Defect Density | ALevel | 2 cm-2 | ||||
B Level | > 2 cm-2 | |||||
Thickness | 350 ± 25 μm | |||||
Orientation | C-axis(0001) ± 0.5° | |||||
Orientation Flat | (1-100) ± 0.5° 8 ± 1mm | (1-100) ± 0.5° 12 ± 1mm | (1-100) ± 0.5° 14 ± 1mm | (1-100) ± 0.5° 14 ± 1mm | ||
Secondary Orientation Flat | (11-20) ± 3° 4 ± 1mm | (11-20) ± 3° 6 ± 1mm | (11-20) ± 3° 7 ± 1mm | (11-20) ± 3° 7 ± 1mm | ||
TTV(Total Thickness Variation) | <15 μm | |||||
BOW | <20 μm | |||||
Conduction Type | N-type | Semi-Insulating | ||||
Resistivity(300K) | < 0.5 Ω.cm | >106 Ω.cm | ||||
Dislocation Density | Less than 5x106 cm-2 | |||||
Useable Surface Area | > 90% | |||||
Polishing | Front Surface: Ra < 0.2nm. Epi-ready polished Back Surface: Fine ground | |||||
Package | Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere. | |||||
HR‐XRD Rocking Curves
Contact Person: Ms. Linda
Tel: +86-19945681435
Address: Rm 1712-1715, No.88, Sibao Rd, Shanghai , China